Display device

ABSTRACT

In a pixel portion, a scan signal line and an auxiliary capacitor line are formed using a second conductive film, and a data signal line is formed using a first conductive film. In a TFT portion, a gate electrode is formed using the first conductive film and electrically connected to the scan signal line formed using the second conductive film through an opening in a gate insulating film. Further, a source electrode and a drain electrode are formed using the second conductive film. In the auxiliary capacitor portion, the auxiliary capacitor line formed using the second conductive film serves as a lower electrode, the pixel electrode serves as an upper electrode, and the passivation film used as a dielectric film is interposed between the capacitor electrodes.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a display device using a thin filmtransistor at least in a pixel portion and a method for manufacturingthe display device, and specifically relates to a display device havinga pixel portion with a high aperture ratio and a method formanufacturing the display device.

2. Description of the Related Art

In recent years, a large liquid crystal module with a diagonal ofgreater than or equal to 30 inches or 40 inches has been activelydeveloped for use as display devices such as liquid crystal televisions.In particular, demand for high definition panels for fullhigh-definition (FHD) television or the like is high. A variety ofcharacteristics such as high speed response corresponding to a speed ofdisplaying a moving picture, excellent color reproducibility, sufficientluminance, and a high viewing angle in addition to high definitiondescribed above are needed especially in a liquid crystal module for useas liquid crystal televisions.

Conventionally, as the liquid crystal module for liquid crystaltelevisions, an active matrix module in which a plurality of pixels eachhaving a thin film transistor (hereinafter, referred to as a TFT) usingamorphous silicon as an active element are arranged has been used. Inparticular, the TFT generally has an inversed staggered structure whichis suitable for mass production. In an element substrate having such aninversed staggered amorphous silicon TFT, a conductive film which isfirst deposited over the substrate (hereinafter, referred to as a firstconductive film) has been used as a scan signal line (also referred toas a gate wiring), and a conductive film which is formed over a gateinsulating film (hereinafter, referred to as a second conductive film)has been used as a data signal line (also referred to as a sourcewiring). The scan signal line is provided in a horizontal direction withrespect to the substrate surface and the data signal line is provided ina vertical direction with respect to the substrate surface.

In a pixel structure of a conventional active matrix display device, anauxiliary capacitor portion which holds a data signal for one frameperiod (also referred to as an additional capacitor or a storagecapacitor) is provided. The auxiliary capacitor portion has employedeither a mode in which the first conductive film to be an auxiliarycapacitor line and a light-transmitting conductive film to be a pixelelectrode formed as an uppermost layer each serve as a capacitorelectrode (see Patent Document 1: Japanese Published Patent ApplicationNo. H2-48639), or a mode in which the first conductive film to be anauxiliary capacitor line and the second conductive film connected to alight-transmitting conductive film each serve as a capacitor electrode(see Patent Document 2: Japanese Published Patent Application No.H6-202153). The auxiliary capacitor line is provided in parallel to thescan signal line. In either mode, the auxiliary capacitor portion isformed in the same manufacturing process in which formation from aninverted staggered TFT to a pixel electrode is performed, andsuppression of increase in the number of steps is a basic purpose of theauxiliary capacitor portion.

A bridge structure is disclosed in which most of a gate wiring and asource wiring which perpendicularly intersect with each other are formedusing the first conductive film, and the source wiring which is dividedat an intersection of the gate wiring and the source wiring areconnected using the second conductive film which crosses the gate wiring(see Patent Document 3: Japanese Published Patent Application No.H1-101519). In addition, a structure is disclosed in which a pixelelectrode formed using indium tin oxide (ITO) is formed over a gateinsulating film and a counter electrode formed using indium tin oxide(ITO) is formed with a passivation film interposed therebetween to forman auxiliary capacitor portion (See Patent Document 4: JapanesePublished Patent Application No. H5-289111).

SUMMARY OF THE INVENTION

In the structure of the Patent Document 1, a stacked layer of a gateinsulating film, a passivation film, and an anodized film is used as adielectric film between the capacitor electrodes. Since the totalthickness of the gate insulating film, the passivation film, and theanodized film is the thickness of the dielectric film in this case, thewhole dielectric film is thick. Accordingly, electrostatic capacitancewhich can be held becomes small. Therefore, the area of the auxiliarycapacitor portion needs to be large; however, the increase in the areaof the auxiliary capacitor portion leads to reduction in an apertureratio of a pixel portion, which is not preferable.

In the structure of the Patent Document 2, a single-layer gateinsulating film is used as the dielectric film of the auxiliarycapacitor portion, so that the thickness of the dielectric film can besmaller than that of Patent Document 1. However, the thickness of thegate insulating film is generally larger than that of the passivationfilm. The thickness of the gate insulating film is designed, placinghighest priority on electric characteristics of a TFT, and designed inconsideration of the electric characteristics of a TFT, the withstandvoltage of the gate insulating film, or the like. Therefore, the area orthe like of the auxiliary capacitor portion is designed, secondarily inaccordance with the thickness of the gate insulating film that isdesigned to obtain a desired TFT so as to form a desired auxiliarycapacitor portion.

Accordingly, for a higher aperture ratio of the pixel portion, it isideal to use only a passivation film which can have the smallestthickness as a dielectric film of the auxiliary capacitor portion.However, in the conventional pixel structure typified by the PatentDocuments 1 and 2, the data signal line to be provided in a verticaldirection with respect to the substrate surface is formed using thesecond conductive film; therefore, it is impossible to form theauxiliary capacitor line in a horizontal direction so as to cross thedata signal line using the second conductive film. Accordingly, in theconventional pixel structure, it is difficult to use alight-transmitting film and the second conductive film as capacitorelectrodes and form an auxiliary capacitor portion in which only apassivation film is used as a dielectric film.

Then, a structure in the Patent Document 3 is given in which most of thegate wiring and the source wiring are formed using the first conductivefilm, and the source wiring which is divided at an intersection of thegate wiring and the source wiring is connected using the secondconductive film. Although not described in the Patent Document 3, theauxiliary capacitor line formed using the second conductive film can bearranged in a horizontal direction with respect to a substrate;therefore, an auxiliary capacitor portion in which only a passivationfilm is used as a dielectric film can be formed. However, due to the useof a bridge structure in which the source wiring which is divided at anintersection of the gate wiring and the source wiring is connected usingthe second conductive film which crosses the gate wiring, the datasignal line is not formed using one conductive film. That is, anotherconductive film is needed for connection, which leads to increase incontact resistance. Since two contacts are formed in each pixel in therow direction, wiring resistance is significantly increased especiallyin a large panel with a diagonal of greater than or equal to 30 inches,which causes signal delay. Further, if poor contact occurs even in asingle contact in the data signal line, all the pixels which are locatedahead of the poor contact portion in a column connected to the datasignal line have defects. A so-called line defect occurs, which lowersreliability.

In the structure in the Patent Document 4, an auxiliary capacitorportion which has a pixel electrode of a lower electrode, a counterelectrode of an upper electrode, and a dielectric film in which apassivation film is used can be formed. However, the passivation film aswell as liquid crystal is included between the pixel electrode and thecommon electrode; therefore, variation in electric filed applied to theliquid crystal is caused, which results in decrease in image quality.

In view of the above-described problems, it is an object of anembodiment of the present invention to provide a highly-reliable displaydevice having a pixel with a high aperture ratio. In addition, it isanother object of an embodiment of the present invention to manufacturea display device with a high aperture ratio at low cost.

In order to achieve the above objects, one embodiment of the presentinvention is that in a pixel portion, a scan signal line and anauxiliary capacitor line are formed using a second conductive film, anda data signal line is formed using a first conductive film. In a TFTportion, a gate electrode is formed using the first conductive film andelectrically connected to the scan signal line formed using the secondconductive film through an opening in a gate insulating film. Further, asource electrode and a drain electrode are formed using the secondconductive film. Further, one of the source electrode and the drainelectrode is electrically connected to the data signal line formed usingthe first conductive film through the opening in the gate insulatingfilm. The other of the source electrode and the drain electrode isconnected to a pixel electrode formed using a light-transmittingconductive film through an opening in a passivation film and aplanarization film. Further, the pixel electrode is arranged so as tooverlap with the scan signal line 101 and the data signal line 102 in aperipheral edge portion. In the auxiliary capacitor portion, theauxiliary capacitor line formed using the second conductive film servesas a lower electrode, the pixel electrode serves as an upper electrode,and only the passivation film used as a dielectric film is interposedbetween the capacitor electrodes.

Further, another embodiment of the present invention is that in order toform an opening in the passivation film and the planarization film,where the source electrode or the drain electrode is connected to thepixel electrode, and an opening in the planarization film in theauxiliary capacitor portion at the same time using one photomask,photolithography is performed using a multi-tone mask.

Another embodiment of the present invention is a display deviceincluding a gate electrode which is formed using a first conductive filmover a light-transmitting substrate; a data signal line which is formedusing the first conductive film and extends in one direction; a firstinsulating film which is provided over the first conductive film; asemiconductor film which is provided over the first insulating film; asource electrode and a drain electrode which are formed using a secondconductive film over the first insulating film and the semiconductorfilm; a scan signal line which is formed using the second conductivefilm and extends in a direction intersecting with the one direction; anauxiliary capacitor line which is formed using the second conductivefilm and extends in a direction intersecting with the one direction; asecond insulating film which is provided over the second conductivefilm; a third insulating film which is provided over the secondinsulating film; and a pixel electrode which is provided over the thirdinsulating film and overlaps with the data signal line, the scan signalline, or the auxiliary capacitor line in a peripheral edge portion. Inthe display device, one of the source electrode and the drain electrodeis electrically connected to the semiconductor film and the data signalline; the other of the source electrode and the drain electrode iselectrically connected to the semiconductor film and the pixelelectrode; the gate electrode is electrically connected to the scansignal line; and the auxiliary capacitor line as well as the pixelelectrode is included in the auxiliary capacitor portion where thesecond insulating film is used as a dielectric film.

Another embodiment of the present invention is a display deviceincluding a gate electrode which is formed using a first conductive filmover a light-transmitting substrate; a data signal line which is formedusing the first conductive film and extends in one direction; a firstinsulating film which is provided over the first conductive film; amicrocrystalline semiconductor film which is provided over the firstinsulating film; a buffer layer which is provided over themicrocrystalline semiconductor film and has a portion that is recessedwhen seen in cross section; a first impurity semiconductor film and asecond impurity semiconductor film, to which an impurity elementimparting one conductivity type is added, and which are provided overthe buffer layer; a source electrode and a drain electrode which areformed using a second conductive film which is formed over the firstinsulating film, the first impurity semiconductor film and the secondimpurity semiconductor film; a scan signal line which is formed usingthe second conductive film and extends in a direction intersecting withthe one direction; an auxiliary capacitor line which is formed using thesecond conductive film and extends in a direction intersecting with theone direction; a second insulating film which is provided over thesecond conductive film; a third insulating film which is provided overthe second insulating film; and a pixel electrode which is provided overthe third insulating film and overlaps with the data signal line, thescan signal line, or the auxiliary capacitor line in a peripheral edgeportion. In the display device, one of the source electrode and thedrain electrode is electrically connected to the first impuritysemiconductor film and the data signal line; the other of the sourceelectrode and the drain electrode is electrically connected to thesecond impurity semiconductor film and the pixel electrode; the gateelectrode is electrically connected to the scan signal line; and theauxiliary capacitor line as well as the pixel electrode is included inthe auxiliary capacitor portion where the second insulating film is usedas a dielectric film.

Note that the above-described semiconductor film preferably has aportion that is recessed when seen in cross section. Further, over thesemiconductor film, the first impurity semiconductor film and the secondimpurity semiconductor film, to which the impurity element imparting oneconductivity type is added, are provided. It is preferable that one ofthe source electrode and the drain electrode be electrically connectedto the first impurity semiconductor film, the semiconductor film, andthe data signal line and that the other of the source electrode and thedrain electrode be electrically connected to the second impuritysemiconductor film, the semiconductor film, and the pixel electrode.

Note that it is preferable that the third insulating film be formedusing a photosensitive organic resin material.

Note that it is preferable that the data signal line and the auxiliarycapacitor line intersect with each other with the first insulating filminterposed therebetween.

Another embodiment of the present invention is a method formanufacturing a display device including the steps of forming a gateelectrode and a data signal line using a first conductive film over alight-transmitting substrate; forming a first insulating film and asemiconductor film in this order over the gate electrode and the datasignal line; etching the semiconductor film to form a secondsemiconductor film over the gate electrode; etching the first insulatingfilm to form a first opening which reaches the gate electrode and asecond opening which reaches the data signal line; forming a secondconductive film over the first insulating film and the secondsemiconductor film; etching the second conductive film to form a scansignal line which is electrically connected to the gate electrodethrough the first opening, a source electrode and a drain electrode, oneof which is electrically connected to the data signal line through thesecond opening, and an auxiliary capacitor line; forming a secondinsulating film over the first insulating film, the second semiconductorfilm, the source electrode and the drain electrode, the scan signalline, and the auxiliary capacitor line; forming a third insulating filmover the second insulating film; removing part of the second insulatingfilm and part of the third insulating film to form a third opening whichreaches the drain electrode; removing part of the third insulating filmto form a fourth opening by which the second insulating film formed overthe auxiliary capacitor line is exposed; and forming, over the thirdinsulating film, a pixel electrode which is electrically connected tothe drain electrode through the third opening and which is included aswell as the auxiliary capacitor line in an auxiliary capacitor portionwhere the second insulating film is used as a dielectric film in thefourth opening.

Another embodiment of the present invention is a method formanufacturing a display device including the steps of forming a gateelectrode and a data signal line which are formed using a firstconductive film over a light-transmitting substrate; forming a firstinsulating film, a semiconductor film, and an impurity semiconductorfilm to which an impurity element imparting one conductivity type isadded in this order over the gate electrode and the data signal line;forming a first mask layer over the impurity semiconductor film byphotolithography using a multi-tone mask; etching the first insulatingfilm, the semiconductor film, and the impurity semiconductor film usingthe first mask layer to form a first opening which reaches the gateelectrode and a second opening which reaches the data signal line;performing ashing on the first mask layer to form a second mask layer;etching the semiconductor film and the impurity semiconductor film usingthe second mask layer to form a second semiconductor film and a secondimpurity semiconductor film; forming a second conductive film over thefirst insulating film and the second impurity semiconductor film;forming a third mask layer over the second conductive film; etching thesecond conductive film and the second impurity semiconductor film usingthe third mask layer to form a scan signal line which is electricallyconnected to the gate electrode through the first opening, a sourceelectrode and a drain electrode one of which is electrically connectedto the data signal line through the second opening, an auxiliarycapacitor line, a third impurity semiconductor film, and a fourthimpurity semiconductor film; forming a second insulating film over thefirst insulating film, the second semiconductor film, the third impuritysemiconductor film, the fourth impurity semiconductor film, the sourceelectrode and the drain electrode, the scan signal line, and theauxiliary capacitor line; forming a third insulating film over thesecond insulating film; forming, in the third insulating film, a thirdopening by which the second insulating film is exposed and a recessedportion which is recessed when seen in cross section and in which thethird insulating film remains, by performing photolithography using amulti-tone mask; etching the second insulating film in the third openingto form a fourth opening which reaches the drain electrode; performingashing on the third insulating film in the recessed portion to form afifth opening by which the second insulating film formed over theauxiliary capacitor line is exposed; and forming, over the thirdinsulating film, a pixel electrode which is electrically connected tothe drain electrode through the fourth opening and which is included aswell as the auxiliary capacitor line in an auxiliary capacitor portionwhere the second insulating film is used as a dielectric film in thefifth opening.

Another embodiment of the present invention is that since only apassivation film is used as a dielectric film in an auxiliary capacitorportion in a display device, the thickness of the dielectric film can besmall. Thus, the area of the auxiliary capacitor portion can be small,so that the aperture ratio of a pixel portion can be improved. Further,a display device with a high aperture ratio can be produced at low cost.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 is a plane view of a display device according to one embodimentof the present invention;

FIGS. 2A to 2D are views illustrating a film formation process of thedisplay device according to one embodiment of the present invention;

FIG. 3 is a cross-sectional view of a display device according to oneembodiment of the present invention;

FIG. 4 is a cross-sectional view of a display device according to oneembodiment of the present invention;

FIGS. 5A to 5C are views illustrating a method for manufacturing adisplay device according to one embodiment of the present invention;

FIGS. 6A to 6C are views illustrating a method for manufacturing adisplay device according to one embodiment of the present invention;

FIGS. 7A to 7C are views illustrating a method for manufacturing adisplay device according to one embodiment of the present invention;

FIGS. 8A to 8C are views illustrating a method for manufacturing adisplay device according to one embodiment of the present invention;

FIGS. 9A to 9C are views illustrating a method for manufacturing adisplay device according to one embodiment of the present invention;

FIGS. 10A to 10D are views illustrating multi-tone masks which can beused in one embodiment of the present invention;

FIG. 11 is a cross-sectional view of a display device according to oneembodiment of the present invention;

FIGS. 12A to 12C are views each illustrating a display device accordingto one embodiment of the present invention;

FIGS. 13A and 13B are views illustrating a display device according toone embodiment of the present invention;

FIGS. 14A and 14D are views each illustrating an electronic deviceaccording to one embodiment of the present invention; and

FIG. 15 is a block diagram illustrating a main structure of anelectronic device according to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the accompanying drawings. However, the present inventioncan be implemented in various modes, and it is easily understood bythose skilled in the art that modes and details can be variously changedwithout departing from the scope and the spirit of the presentinvention. Therefore, the present invention is not construed as beinglimited to description of the embodiments. Note that in the drawings ofthis specification, the identical portions or portions having a similarfunction are denoted by the identical reference numerals, and thedescription thereof may be omitted.

Embodiment 1

In this embodiment, a display device having a thin film transistor(hereinafter, referred to as a TFT) and a manufacturing process thereofwill be described with reference to FIG. 1, FIGS. 2A to 2D, FIG. 3, andFIG. 4.

In a TFT, carrier mobility is higher when an n-type semiconductor isused as a semiconductor film as compared to the case of using a p-typesemiconductor; therefore, an n-type TFT is more suitable for forming adriver circuit. However, in this embodiment, either an n-type TFT or ap-type TFT may be employed. Even in the case of using a TFT with eitherpolarity, all the TFTs formed over one substrate have the same polarity,whereby the number of steps can be suppressed. On the other hand, in thecase of using both p-type and n-type TFTs, it is possible to form adriver circuit with low power consumption. Here, a pixel TFT using ann-channel TFT and a manufacturing process thereof will be described.

FIG. 1 is an example of a plane view of a display device having a TFTusing an active matrix substrate according to this embodiment. Forsimplification, FIG. 1 illustrates one pixel structure of a plurality ofpixels which are arranged in matrix. FIG. 3 is a cross-sectional viewtaken along a line X-Z-Y of FIG. 1 and FIG. 4 is a cross-sectional viewtaken along a line Y-Z-W of FIG. 1.

As illustrated in FIG. 1, FIG. 3, and FIG. 4, the active matrixsubstrate has a plurality of scan signal lines 101 which are arranged inparallel with each other and a plurality of data signal lines 102 whichintersect with each scan signal line 101 over a light-transmittingsubstrate 100. The scan signal lines 101 are provided in a horizontaldirection with respect to the substrate surface and the data signallines 102 are provided in a vertical direction with respect to thesubstrate surface. Here, “a vertical direction” and “a horizontaldirection” are directions which are set arbitrarily. On a rectangularsubstrate surface, the direction of the short side may be “a verticaldirection” or “a horizontal direction”. Further, the active matrixsubstrate has a plurality of auxiliary capacitor lines 103 which areparallel to each scan signal line 101. The data signal lines 102 areformed using a first conductive film. The scan signal lines 101 and theauxiliary capacitor lines 103 are formed using a second conductive film.A pixel electrode 110 formed using a light-transmitting conductive filmis arranged in a region surrounded by the scan signal lines 101 and thedata signal lines 102 so as to overlap with the scan signal line 101 andthe data signal line 102 in a peripheral edge portion.

Further, a TFT is provided as a switching element at the periphery ofthe intersection of the scan signal line 101 and the data signal line102. The TFT includes a gate electrode 104 formed using the firstconductive film; a gate insulating film over the gate electrode; asemiconductor film 105 over the gate insulating film; an impuritysemiconductor film 112 a and an impurity semiconductor film 112 b overthe semiconductor film 105, to which an impurity element imparting oneconductivity type is added; and a source or drain electrode 106 a and asource or drain electrode 106 b over the impurity semiconductor film 112a and the impurity semiconductor film 112 b, to which an impurityelement imparting one conductivity type is added. Note that the TFT usedin this embodiment is an inversed staggered TFT with a channel-etchedstructure. However, the TFT which can be used in the present inventionis not limited thereto and the mode can be changed without departingfrom the scope and spirit of the present invention.

In the TFT portion, the gate electrode 104 and the scan signal line 101are electrically connected to each other through an opening 107 in thegate insulating film 111. Further, one of the source or drain electrode106 a and the source or drain electrode 106 b is electrically connectedto the data signal line 102 through an opening 108 in the gateinsulating film 111. Furthermore, the other of the source or drainelectrode 106 a and the source or drain electrode 106 b is electricallyconnected to the pixel electrode 110 through an opening 109 in apassivation film 113 and a planarization film 114 formed in order toplanarize the passivation film 113 and the pixel electrode 110. Notethat the source electrode or the drain electrode is determined dependingon the potential of the electrode; therefore, the source electrode andthe drain electrode switch positions with each other depending on thepotential of the electrode. The passivation film is a protection filmwhich is formed in order to prevent a contamination impurity such as anorganic matter, a metal, or water vapor suspended in the air fromentering the semiconductor films.

An auxiliary capacitor portion has a structure where in an opening 115,the auxiliary capacitor line 103 formed using the second conductive filmserves as a lower electrode and the pixel electrode 110 servers as anupper electrode with only the passivation film 113 as a dielectric filminterposed therebetween.

FIGS. 2A to 2D are views illustrating a state where each layer isstacked in order. In FIG. 2A, patterns of the data signal line 102 andthe gate electrode 104 are formed using the first conductive film. InFIG. 2B, patterns of the semiconductor film 105 and the impuritysemiconductor film 112 a and the impurity semiconductor film 112 b, towhich an impurity element imparting one conductivity type is added, areformed over the gate insulating film 111 in the TFT portion. Inaddition, the opening 107 and the opening 108 are formed in the gateinsulating film 111. Note that the gate insulating film 111 and theimpurity semiconductor film 112 a and the impurity semiconductor film112 b, to which an impurity element imparting one conductivity type isadded, are not illustrated in FIG. 2B. In FIG. 2C, the scan signal line101, the auxiliary capacitor line 103, the source or drain electrode 106a and the source or drain electrode 106 b are formed using the secondconductive film. In FIG. 2D, the opening 109 and the opening 115 areformed in the passivation film 113 and the planarization film 114 overthe source or drain electrode 106 a and the source or drain electrode106 b. Further, the pixel electrode 110 formed using alight-transmitting conductive film is also formed over the passivationfilm 113 and the planarization film 114. Note that the passivation film113 and the planarization film 114 are not illustrated in FIG. 2D.

With the above-described pixel structure, only passivation film is usedas a dielectric film of the auxiliary capacitor portion; therefore, thethickness of the dielectric film can be small. Thus, the area of theauxiliary capacitor portion can be small, so that the aperture ratio ofa pixel portion can be improved.

Further, connection of the data signal line through the opening is notmade and the data signal line can be formed using one conductive filmwithout connection through an opening, so that signal delay due tocontact resistance does not occur. Accordingly, wiring delay of a datasignal can be reduced, so that a large display device with especiallyhigh quality can be manufactured. Further, if a contact failure occursin the data signal line, not a line defect but a point defect occurs.Therefore, a defect of a displayed image is not easily recognized, whichleads to improvement in image quality and reliability. Further, yield isimproved in terms of mass production.

Since there exist no extra electrodes between the pixel electrode and acounter electrode which are included in a pixel electric capacitanceportion, electric filed is applied to liquid crystal evenly, so that theimage quality is improved.

Further, by using the planarization film, the pixel electrode which isprovided as an uppermost layer is formed to be planar without beingaffected by the uneven shape of a structural object in a lower layerthan the pixel electrode, so that orientation disorder of liquid crystalmolecules due to the uneven shape is suppressed and the orientation ofthe liquid crystal molecules can be controlled ideally. Therefore, imagedisplay with high quality is possible. Further, since provision of theplanarization film makes it possible to significantly reduce parasiticcapacitance between the pixel electrode and the data signal line andbetween the pixel electrode and the scan signal line, the peripheraledge portion of the pixel electrode can overlap with the data signalline and the scan signal line, so that higher aperture ratio of thepixel can be realized.

Further, since the auxiliary capacitor line can be provided over thedata signal line, the auxiliary capacitor portion can be formed even ina region where the pixel electrode, the auxiliary capacitor line and thedata signal line are stacked. Accordingly, the area of the auxiliarycapacitor line can be reduced by the area where the pixel electrode, theauxiliary capacitor line, and the data signal line are overlapped witheach other, so that higher aperture ratio of the pixel can be realized.

In a pixel or the like conforming to High Definition Television (HDTV),a distance between adjacent scan signal lines is set to be longer than adistance between adjacent data signal lines. Accordingly, when theauxiliary capacitor line is provided to extend in the same direction asthe scan signal line, the distance between the adjacent scan signallines can be longer, so that line-to-line capacitance (parasiticcapacitance) can be reduced. Further, since the distance between theadjacent scan signal lines is longer than the distance between theadjacent data signal lines, the auxiliary capacitor line can be providedbetween the scan signal lines more easily than between the data signallines.

Hereinafter, a manufacturing method will be described in detail. FIGS.5A to 5C, FIGS. 6A to 6C, FIGS. 7A to 7C, FIGS. 8A to 8C, and FIGS. 9Ato 9C are views illustrating a manufacturing process of a display devicehaving a TFT. FIGS. 5A to 5C, FIGS. 6A to 6C, FIGS. 7A to 7C, FIGS. 8Ato 8C, and FIGS. 9A to 9C correspond to a cross section taken along aline Y-Z-W in FIG. 1.

The first conductive film is deposited over a light-transmittingsubstrate 200 to form a data signal line 201 and a gate electrode 202(see FIG. 5A). As the light-transmitting substrate 200, any of thefollowing substrates can be used: non-alkaline glass substratesmanufactured by a fusion method or a float method, such as a bariumborosilicate glass substrate, an aluminoborosilicate glass substrate,and an aluminosilicate glass substrate; a quartz substrate; a plasticsubstrate having heat resistant enough to withstand a processtemperature of this manufacturing process; and the like. As thelight-transmitting substrate 200, a substrate having a size of 320mm×400 mm, 370 mm×470 mm, 550 mm×650 mm, 600 mm×720 mm, 680 mm×880 mm,730 mm×920 mm, 1000 mm×1200 mm, 1100 mm×1250 mm, 1150 mm×1300 mm, 1500mm×1800 mm, 1900 mm×2200 mm, 2160 mm×2460 mm, 2400 mm×2800 mm, 2850mm×3050 mm, or the like can be used.

It is preferable to use aluminum or copper which is a low-resistantmaterial for the first conductive film since the first conductive filmserves as a wiring. When aluminum or copper is used, signal delay isreduced, so that higher image quality can be expected. When an alloy ofaluminum and any of neodymium, silicon, copper, and the like, or amixture of aluminum and any of neodymium, silicon, copper, and the likeis used, hillocks or whiskers can be suppressed, and electromigration orstress migration can also be suppressed. An alloy of silicon or the likeand copper may also be used for the same reason. Alternatively, thematerial of the first conductive film can be selected in considerationof an etchant at the time of processing a wiring. The data signal line201 and the gate electrode 202 can be formed in such a manner that aconductive film is formed over the light-transmitting substrate 200 by asputtering method, a vacuum evaporation method or a metal organicchemical vapor deposition (MOCVD) method, a mask layer is formed overthe conductive film by a photolithography technique or an ink-jetmethod, and the conductive film is etched using the mask layer.Alternatively, the data signal line 201 and the gate electrode 202 canbe formed by discharging a conductive nanopaste of silver, gold, copper,or the like by an inkjet method and baking it.

When aluminum or copper is used alone as the first conductive film, aprotrusion such as a hillock or a whisker is generated due to stressapplied between the first conductive film and the substrate or thermalhistory in a subsequent manufacturing step. The protrusion destroys thegate insulating film formed thereover and causes a defect such as anelectrical short circuit or the like; therefore, a barrier layer ispreferably formed by stacking a high-melting-point metal, such asmolybdenum, titanium, tungsten or tantalum, which has a barrierproperty, or nitride thereof. When copper is used, there is particularlya concern that due to heat, copper diffuses into an i-type amorphoussilicon film which is to be a channel formation region; therefore, thebarrier layer is preferably formed. The barrier layer may be providedbetween the light-transmitting substrate 200 and the data signal line201 and the gate electrode 202 or over the data signal line 201 and thegate electrode 202.

Note that since a semiconductor film and a wiring are formed over thedata signal line 201 and the gate electrode 202, the data signal line201 and the gate electrode 202 are preferably processed to have forwardtapered edge portions in order to prevent disconnection or an electricalshort circuit.

Next, a gate insulating film 203, a semiconductor film 204, and animpurity semiconductor film 205 to which an impurity element impartingone conductivity type is added are formed in this order over the datasignal line 201 and the gate electrode 202 (see FIG. 5B).

Note that the gate insulating film 203, the semiconductor film 204, andthe impurity semiconductor film 205 to which an impurity elementimparting one conductivity type is added are preferably formedsuccessively without being exposed to the atmosphere. By depositingsuccessively the gate insulating film 203, the semiconductor film 204,and the impurity semiconductor film 205 to which an impurity elementimparting one conductivity type is added without being exposed to theatmosphere, each interface between the stacked layers can be formedwithout being contaminated by atmospheric components or contaminatingimpurities suspended in the atmosphere. Thus, variation in thecharacteristics of thin film transistors can be reduced.

The gate insulating film 203 can be formed by a CVD method, a sputteringmethod, or the like using a silicon oxide film, a silicon nitride film,a silicon oxynitride film, or a silicon nitride oxide film. In thisembodiment, a silicon nitride film is used for the gate insulating film203. A silicon nitride film has a high relative permittivity and ispreferable as a gate insulating film. In addition, the silicon nitridefilm also servers as a blocking film which prevents alkali metal ionssuch as sodium ions contained in a glass substrate from diffusing intothe semiconductor film 204. Note that the gate insulating film 203 mayalso be formed by stacking a silicon nitride film or a silicon nitrideoxide film and a silicon oxide film or a silicon oxynitride film in thisorder. Note that the gate insulating film 203 can also be formed bystacking not two layers but three layers of a silicon nitride film or asilicon nitride oxide film, a silicon oxide film or a silicon oxynitridefilm, and a silicon nitride film or a silicon nitride oxide film in thisorder from the substrate side. Furthermore, the gate insulating film 203is preferably formed with the use of a microwave plasma CVD apparatuswith a frequency of 1 GHz. A silicon nitride film, a silicon nitrideoxide film or a silicon oxynitride film formed with the use of amicrowave plasma CVD apparatus has high withstand voltage, and thusreliability of a thin film transistor which is to be manufactured latercan be increased.

As an example of the three-layer structure of the gate insulating film203, a silicon nitride film or a silicon nitride oxide film may beformed over the gate electrode 202 and the data signal line 201 as afirst layer, a silicon oxynitride film may be formed as a second layer,and a silicon nitride film may be formed as a third layer. In addition,a semiconductor film may be formed over the silicon nitride film that isa top layer. In this case, the silicon nitride film or the siliconnitride oxide film as the first layer is preferably thicker than 50 nmand has an effect as a barrier which blocks impurities such as sodium,an effect of preventing a hillock of the gate electrode, an effect ofpreventing oxidation of the gate electrode, and the like.

The silicon nitride film as the third layer has effects of improvingadhesion of the semiconductor film and preventing oxidation thereof.

A nitride film such as an ultrathin silicon nitride film is formed on asurface of the gate insulating film 203 as described above, wherebyadhesion of the semiconductor film can be improved. The nitride film maybe formed by a plasma CVD method, or by nitridation treatment that istreatment with plasma which is generated by microwaves and has highdensity and low temperature. In addition, the silicon nitride film orthe silicon nitride oxide film may also be formed when a reactionchamber is subjected to silane flush treatment.

Note that, in this embedment mode, the silicon oxynitride film means afilm that contains more oxygen than nitrogen and, when being measuredusing Rutherford backscattering spectrometry (RBS) and hydrogen forwardscattering (HFS), includes oxygen, nitrogen, silicon, and hydrogen atconcentrations ranging from 50 at. % to 70 at. %, 0.5 at. % to 15 at. %,25 at. % to 35 at. %, and 0.1 at. % to 10 at. %, respectively. Further,the silicon nitride oxide film means a film that contains more nitrogenthan oxygen and, when being measured using RBS and HFS, includes oxygen,nitrogen, silicon, and hydrogen at concentrations ranging from 5 at. %to 30 at. %, 20 at. % to 55 at. %, 25 at. % to 35 at. %, and 10 at. % to30 at. %, respectively. Note that percentages of nitrogen, oxygen,silicon, and hydrogen fall within the ranges given above, where thetotal number of atoms contained in the silicon oxynitride film or thesilicon nitride oxide film is defined as 100 at. %.

Selection of the material and the film formation method of the gateinsulating film is an important factor in determining a film quality orfilm characteristics. When the gate insulating film and the passivationfilm are used as a dielectric film of the auxiliary capacitor portion asin a conventional manner, the relative permittivity of the gateinsulating film needs to be taken into consideration at the time offorming the auxiliary capacitor portion. However, in this embodiment,only the passivation film is used as a dielectric film of the auxiliarycapacitor portion; therefore, the material and the film formation methodof the gate insulating film can be selected in consideration of only thedesign of a TFT such as the characteristics or the withstand voltage ofthe TFT.

The semiconductor film 204 is a semiconductor film to which an impurityelement imparting conductivity is not added sufficiently and can beformed using an amorphous semiconductor, a microcrystallinesemiconductor, or a polycrystalline semiconductor. In this embodiment,amorphous silicon is used as the semiconductor film 204.

When an n-channel thin film transistor is to be formed, to the impuritysemiconductor film 205 to which an impurity element imparting oneconductivity type is added, phosphorus may be added as a typicalimpurity element, and an impurity gas such as PH₃ may be added tosilicon hydride. When a p-channel thin film transistor is to be formed,boron may be added as a typical impurity element, and an impurity gassuch as B₂H₆ may be added to silicon hydride. The impurity semiconductorfilm 205 to which an impurity element imparting one conductivity type isadded can be formed using an amorphous semiconductor, a microcrystallinesemiconductor or a polycrystalline semiconductor. In this embodiment,amorphous silicon to which phosphorus is added at a high concentrationis used as the impurity semiconductor film 205 to which an impurityelement imparting one conductivity type is added. Note that the impuritysemiconductor film 205 to which an impurity element imparting oneconductivity type is added is preferably formed to have a thickness of 2nm to 50 nm (preferably 10 nm to 30 nm). Note that the impuritysemiconductor film 205 to which an impurity element imparting oneconductivity type is added is not necessarily formed. In the case wherethe impurity semiconductor film 205 is not formed, in a similar mannerto the impurity semiconductor film 205 to which an impurity elementimparting one conductivity type is added, an impurity element may beadded to the semiconductor film 204 to form a source region and a drainregion of a thin film transistor.

Next, a mask layer 206 a and a mask layer 206 b are formed over thesemiconductor film 204 and the impurity semiconductor film 205 to whichan impurity element imparting one conductivity type is added (see FIG.5C).

The mask layer 206 a and the mask layer 206 b can be formed by lightexposure using a multi-tone (high-tone) mask. The mask layer 206 a andthe mask layer 206 b are formed using a resist. As the resist, apositive type resist or a negative type resist can be used. Here, apositive type resist is used.

Next, the resist is irradiated with light with the use of a multi-tonemask as a light-exposure mask, and the resist is exposed to the light.

Here, light exposure using the multi-tone mask will be described withreference to FIGS. 10A to 10D.

The multi-tone mask includes three kinds of portions; alight-transmitting portion through which light such as ultraviolet raysis completely transmitted, a semi-light-transmitting portion where lightis reduced by blocking or absorbing, and a light-blocking portion wherelight is completely blocked. Accordingly, the multi-tone mask canachieve three levels of light exposure, and thus transmitted light has aplurality of intensity. One-time light exposure and development processallows a resist mask with regions of plural thicknesses (typically, twokinds of thicknesses) to be formed. Thus, the number of light-exposuremasks can be reduced by using a multi-tone mask.

Typical examples of a multi-tone mask include a gray-tone mask 301 a asillustrated in FIG. 10A, and a half-tone mask 301 b as illustrated inFIG. 10C.

As illustrated in FIG. 10A, the gray-tone mask 301 a includes alight-transmitting substrate 302, and a light-blocking portion 303 and adiffraction grating 304 serving as a semi-light-transmitting portion,which are formed on the light-transmitting substrate 302. Note that thelight-transmitting portion is a portion of the light-transmittingsubstrate 302 on which the light-blocking portion 303 and thediffraction grating 304 are not formed. The light transmittance of thelight-blocking portion 303 is 0%. In contrast, the light transmittanceat the diffraction grating 304 can be controlled by setting an intervalbetween light-transmitting portions such as slits, dots, or meshes to aninterval of less than or equal to the limit of resolution of light usedfor the exposure. Note that the diffraction grating 304 can haveregularly-arranged slits, dots, or meshes form, or irregularly-arrangedslits, dots, or meshes.

As the light-transmitting substrate 302, a substrate that can transmitlight, such as a quartz substrate, can be used. The light-blockingportion 303 and the diffraction grating 304 can be formed using alight-blocking material that absorbs light, such as chromium or chromiumoxide.

When the gray-tone mask 301 a is irradiated with light for exposure, alight transmittance 305 of the light-blocking portion 303 is 0% and thatof a region where neither the light-blocking portion 303 nor thediffraction grating 304 are provided is 100%, as shown in FIG. 10B. Inaddition, the light transmittance of the diffraction grating 304 can becontrolled in the range of 10% to 70%. The light transmittance in thediffraction grating 304 can be controlled by adjusting the interval ofslits, dots, or meshes of the diffraction grating and the pitch thereof.

As illustrated in FIG. 10C, the half-tone mask 301 b includes thelight-transmitting substrate 302, and a semi-light-transmitting portion306 and a light-blocking portion 307, which are formed on thelight-transmitting substrate 302. The semi-light-transmitting portion306 can be formed using MoSiN, MoSi, MoSiO, MoSiON, CrSi, or the like.The light-blocking portion 307 can be formed using a light-blockingmaterial which absorbs light such as chromium or chromium oxide.

When the half-tone mask 301 b is irradiated with light for exposure, alight transmittance 308 of the light-blocking portion 307 is 0% and thatof a region where neither the light-blocking portion 307 nor thesemi-light-transmitting portion 306 are provided is 100%, as shown inFIG. 10D. In addition, the light transmittance of a region where onlythe semi-light-transmitting portion 306 is provided can be controlled inthe range of 10% to 70%. The light transmittance of the region whereonly the semi-light-transmitting portion 306 is provided can becontrolled by adjusting the material of the semi-light-transmittingportion 306.

After light exposure using the multi-tone mask as described above,development is performed, whereby the mask layer 206 a and the masklayer 206 b including regions with different thicknesses can be formed(see FIG. 5C).

Next, with the use of the mask layer 206 a and the mask layer 206 b, thegate insulating film 203, the semiconductor film 204, and the impuritysemiconductor film 205 to which an impurity element imparting oneconductivity type is added are etched to form an opening 207 whichreaches the data signal line 201 (see FIG. 6A). Further, at this time,also in a cross section taken along a line X-Z of FIG. 1, the gateinsulating film 203, the semiconductor film 204 and the impuritysemiconductor film 205 to which an impurity element imparting oneconductivity type is added are etched to form an opening which reachesthe gate electrode.

Next, ashing is performed on the mask layer 206 a and the mask layer 206b. As a result, each area of the mask layer 206 a and the mask layer 206b is decreased, and each thickness thereof is reduced. At this time,resists of the mask layer 206 a and the mask layer 206 b in regions withsmall thicknesses are removed, so that a mask layer 208 can be formed(see FIG. 6B). Note that “ashing” means that a resist is removed in sucha manner that an active oxygen molecule, an ozone molecule, an oxygenatom, or the like generated by discharge or the like chemically acts ona resist which is an organic substance to ash the resist.

The semiconductor film 204 and the impurity semiconductor film 205 towhich an impurity element imparting one conductivity type is added areetched using the mask layer 208 to form a semiconductor film 209 and animpurity semiconductor film 210 to which an impurity element impartingone conductivity type is added (see FIG. 6C). After that, the mask layer208 is removed.

Since a mask layer formed with the use of a multi-tone mask as alight-exposure mask has a plurality of film thicknesses, and can bechanged shapes thereof by performing ashing, the mask layer can be usedin a plurality of etching steps to process into different patterns.Therefore, a mask layer corresponding at least two kinds or more ofdifferent patterns can be formed by one multi-tone mask. Thus, thenumber of light-exposure masks can be reduced and the number ofcorresponding photolithography steps can be also reduced, wherebysimplification of a process can be realized.

Note than when a multi-tone mask is not used, it is preferable to formthe opening 207 after the semiconductor film 204 and the impuritysemiconductor film 205 to which an impurity element imparting oneconductivity type is added are etched to form the semiconductor film 209and the impurity semiconductor film 210 to which an impurity elementimparting one conductivity type is added.

A second conductive film 211 which is to be a source electrode, a drainelectrode, and a scan signal line is formed over the opening 207, thegate insulating film 203, the semiconductor film 209 and the impuritysemiconductor film 210 to which an impurity element imparting oneconductivity type is added (see FIG. 7A). A portion of the secondconductive film which is to be a source electrode or a drain electrodeis connected to the data signal line 201 through the opening 207.Further, also in the cross section taken along the line X-Z of FIG. 1, aportion of the second conductive film which is to be a scan signal lineis connected to the gate electrode through the opening over the gateelectrode.

The second conductive film 211 is preferably formed using aluminum orcopper which is a low-resistant material in a similar manner to thefirst conductive film. When aluminum or copper is used, signal delay isreduced, so that higher image quality can be expected. When an alloy ofaluminum and any of neodymium, silicon, copper, and the like, or amixture of aluminum and any of neodymium, silicon, copper, and the likeis used, hillocks or whiskers can be suppressed, and electromigration orstress migration can also be suppressed. An alloy of copper and siliconor the like may also be used for the same reason. Further it ispreferable to form barrier layers using a high-melting-point metal, suchas molybdenum, titanium, tungsten, or tantalum which has a barrierproperty or nitride thereof and interpose the above-describedlow-resistant material between the barrier layers. In this case, thehigh-melting-point metal which is formed on the lower side of thelow-resistant material has an effect of suppressing interdiffusionbetween the impurity element imparting one conductivity type containedin the impurity semiconductor film 210 and aluminum or copper. Thehigh-melting-point metal which is formed on the upper side of thelow-resistant material has an effect of preventing corrosion of thesecond conductive film due to cell reaction at the time of connectionwith the pixel electrode.

The second conductive film 211 may be formed by a sputtering method, avacuum evaporation method or a metal organic chemical vapor deposition(MOCVD) method. Alternatively, the second conductive film 211 may beformed by discharging a conductive nanopaste of silver, gold, copper, orthe like by a screen printing method, an ink-jet method, or the like andbaking it.

A mask layer 212 a, a mask layer 212 b and a mask layer 212 c are formedover the second conductive film 211 (see FIG. 7B).

With the use of the mask layers 212 a to 212 c, the impuritysemiconductor film 210 to which an impurity element imparting oneconductivity type is added and the second conductive film 211 are etchedto form an impurity semiconductor film 210 a and an impuritysemiconductor film 210 b, to which an impurity element imparting oneconductivity type is added, a source or drain electrode 213 a, a sourceor drain electrode 213 b and an auxiliary capacitor line 214 (see FIG.7C). At this time, the semiconductor film 209 is also preferably etchedto have a portion that is recessed when seen in cross section so that achannel-etched thin film transistor can be obtained. Thus, the impuritysemiconductor film 210 a and the impurity semiconductor film 210 b, towhich an impurity element imparting one conductivity type is added, arecompletely divided, so that electrical short-circuit can be prevented.Further, at this time, also in a cross section take along the line X-Zof FIG. 1, the second conductive film is etched to form the scan signalline.

Next, a passivation film 215 is formed over the source or drainelectrode 213 a, the source or drain electrode 213 b, the auxiliarycapacitor line 214, the impurity semiconductor film 210 a and theimpurity semiconductor film 210 b, to which an impurity elementimparting one conductivity type is added, the semiconductor film 209,and the gate insulating film 203 (see FIG. 8A).

The passivation film 215 can be formed in a similar manner to the gateinsulating film 203. Note that the passivation film 215 is provided toprevent entry of contamination impurities such as an organic substance,a metal, or moisture suspended in the atmosphere. Thus, the passivationfilm 215 is preferably a dense film. Further, since the passivation film215 serves as a dielectric film in the auxiliary capacitor portion, thepassivation film 215 preferably has a high relative permittivity.

The passivation film 215 can be formed using a silicon oxide film, asilicon nitride film, a silicon oxynitride film, or a silicon nitrideoxide film by a CVD method, a sputtering method, or the like. In thisembodiment, a layer in which two silicon nitride films are stacked isused as the passivation film 215. A silicon nitride film has a highrelative permittivity and is preferable as the passivation film. At thistime, the silicon nitride film in an upper layer has a small thicknessand a dense structure and the silicon nitride film in a lower layer hasa large thickness and a rough structure. The silicon nitride film in anupper layer having a dense structure prevents entry of contaminationimpurities. Even if contamination impurities penetrate through thesilicon nitride film in an upper layer, the silicon nitride film in alower layer having a large thickness prevents contamination impuritiesfrom reaching the semiconductor element. In this two layer structure,the silicon nitride film in a lower layer having a large thickness isdeposited at a high speed and the silicon nitride film in an upper layerhaving a small thickness is deposited for a relatively long time;therefore, throughput can be increased in a mass production process. Ofcourse, the structure of the passivation film 215 is not limitedthereto. The passivation film 215 may have a single-layer structure or astacked-layer structure in which two or more layers of a silicon oxidefilm, a silicon nitride film, a silicon oxynitride film and a siliconnitride oxide film are freely combined. The passivation film 215 ispreferably formed using a microwave plasma CVD apparatus with afrequency of 1 GHz. A silicon nitride film, a silicon nitride oxide filmor a silicon oxynitride film formed with use of a microwave plasma CVDapparatus has high withstand voltage, and thus reliability of a thinfilm transistor which is to be manufactured later can be increased. Thesilicon nitride film may be formed by a plasma CVD method, or bynitridation treatment that is treatment with plasma which is generatedby microwaves and has high density and low temperature. In addition, thesilicon nitride film or the silicon nitride oxide film may also beformed when a reaction chamber is subjected to silane flush treatment.

Next, a planarization film 216 is formed over the passivation film 215.The planarization film 216 is formed by applying a photosensitiveorganic resin material (see FIG. 8B). As an organic resin material, amaterial such as a polyimide-based material, a polyester-based materialor a poly-acrylic ester based material is used. The organic resinmaterial described above has a low relative permittivity of about 2 to 3as compared to an inorganic insulating material such as silicon nitrideso that it has an effect of reducing parasitic capacitance between theconductive films.

Next, in the TFT portion, in order to connect a pixel electrode 219 andthe source or drain electrode 213 b to each other, an opening 217 isformed in the passivation film 215 and the planarization film 216. Onthe other hand, in the auxiliary capacitor portion, an opening 218 isformed in only the planarization film 216. At this time, the opening inthe planarization film 216 is formed by a photolithography technique andthe opening in the passivation film 215 is formed by etching.

Here, in order to form the opening 217 in the TFT portion and theopening 218 in the auxiliary capacitor portion with the use of the samemask, a multi-tone mask is used. The multi-tone mask is arranged so thatthe light-transmitting portion is placed over a portion where theopening 217 is formed and the semi-light-transmitting portion is placedover a portion where the opening 218 is formed, and ultravioletirradiation is performed, whereby the opening is formed in theplanarization film 216 formed using a photosensitive organic resinmaterial to form an opening 220 and a recessed portion 221 which isrecessed when seen in cross section (see FIG. 8C). Here, as aphotosensitive organic resin material, a positive photosensitive organicresin material, where a portion exposed to light is dissolved andremoved by development is used.

Since the planarization film 216 above the source or drain electrode 213b in the TFT portion corresponds to the light-transmitting portion ofthe multi-tone mask, the planarization film 216 above the source ordrain electrode 213 b is irradiated with ultraviolet rays having astrong intensity without the intensity of the ultraviolet rays beingreduced. Therefore, the ultraviolet rays reach the bottom of theplanarization film 216, and thus a photosensitizer contained in theorganic resin material starts promoting dissolution. On the other hand,the planarization film 216 above the auxiliary capacitor line 214 of theauxiliary capacitor portion corresponds to the semi-light-transmittingportion of the multi-tone mask; therefore, the intensity of theultraviolet rays is reduced. Accordingly, since the ultraviolet rays donot reach the bottom of the organic resin material, the photosensitizeris not changed at the bottom of the organic resin material. Since theplanarization film 216 above a portion except the above corresponds tothe light-blocking portion of the multi-tone mask, the photosensitizercontained in the organic resin material does not change.

After that, by development, a portion containing a photosensitizer witha high solubility ratio by irradiation with ultraviolet rays is removedwith an organic alkali solution. Thus, in the opening 220, theplanarization film 216 is completely removed and part of the passivationfilm 215 is exposed. In the recessed portion 221, the planarization film216 having a certain thickness remains over the passivation film 215.

Next, the passivation film 215 which is exposed in the opening 220 isremoved by etching to form an opening 222. At this time, since theplanarization film 216 remains in the recessed portion 221, thepassivation film 215 in the recessed portion 221 is not removed (seeFIG. 9A).

Next, the planarization film 216 which remains in the recessed portion221 is removed by ashing treatment to form an opening 218. At this time,by isotropic ashing treatment using oxygen gas plasma or the like, thepalanarization film 216 is removed also in the lateral direction.Therefore, the opening 222 is slightly widened, so that an opening 217having a step shape from the passivation film 215 to the planarizationfilm 216 is formed (see FIG. 9B).

The planarization film 216 on which photolithography has been performedusing the multi-tone mask as a light-exposure mask has a shape with aplurality of thicknesses. The shape of the planarization film 216 can befurther changed by ashing. Accordingly, the planarization film 216having at least two kinds or more of different patterns can be formed byone multi-tone mask. Thus, the number of light-exposure masks can bereduced and the number of corresponding photolithography steps can bealso reduced, whereby simplification of a process and reduction in costcan be realized. Thus, a display device with high quality such as highimage quality or high aperture ratio can be produced at low cost.

Finally, a light-transmitting conductive film is formed over theplanarization film 216, the opening 217 and the opening 218 andpatterned into a shape of the pixel electrode 219 (see FIG. 9C).

As the light-transmitting conductive film, a conductive material havinga light-transmitting property can be used, such as indium oxide whichincludes tungsten oxide, indium zinc oxide which includes tungstenoxide, indium oxide which includes titanium oxide, indium tin oxidewhich includes titanium oxide, indium tin oxide, indium zinc oxide, orindium tin oxide to which silicon oxide is added.

Further, the light-transmitting conductive film can be formed using aconductive composition including a conductive macromolecule (alsoreferred to as a conductive polymer). Sheet resistance of thelight-transmitting conductive film formed using a conductive compositionis preferably less than or equal to 10000 Q/square and lighttransmittance thereof is preferably greater than or equal to 70% at awavelength of 550 nm. Further, the resistance of the conductivemacromolecule included in the conductive composition is preferably lessthan or equal to 0.1 Ω·cm.

As the conductive macromolecule, a so-called π-electron conjugatedconductive macromolecule can be used. As examples thereof, polyanilineor a derivative thereof, polypyrrole or a derivative thereof,polythiophene or a derivative thereof, a copolymer of more than twokinds of them, and the like can be given.

Through the above-described process, an inverted staggered thin filmtransistor with a channel-etched structure of this embodiment ismanufactured.

By employing the structure of this embodiment, only the passivation filmis used as a dielectric film of the auxiliary capacitor portion;therefore, the thickness of the dielectric film can be small. Thus, thearea of the auxiliary capacitor portion can be small, so that theaperture ratio of the pixel portion can be improved.

Further, connection of the data signal line through the opening is notmade and the data signal line can be formed using one conductive filmwithout connection through an opening, so that signal delay due tocontact resistance does not occur. Accordingly, wiring delay of a datasignal can be reduced, so that a large display device with especiallyhigh quality can be manufactured. Further, if a contact failure occursin the data signal line, not a line defect but a point defect occurs.Therefore, a defect of a displayed image is not easily recognized, whichleads to improvement in image quality and reliability. Further, yield isimproved in terms of mass production.

Further, the pixel electrode is formed over the planarization film andthere exist no extra electrodes between the pixel electrode and acounter electrode which are included in a pixel electric capacitanceportion; therefore, electric filed is applied to the liquid crystaluniformly, so that the image quality is improved.

Further, by using the planarization film, the pixel electrode which isprovided as an uppermost layer is formed to be planar without beingaffected by the uneven shape of a structural object in a lower layerthan the pixel electrode, so that orientation disorder of liquid crystalmolecules due to the uneven shape is suppressed and the orientation ofthe liquid crystal molecules can be controlled ideally. Therefore, imagedisplay with high quality is possible. Further, since provision of theplanarization film makes it possible to significantly reduce parasiticcapacitance between the pixel electrode and the data signal line andbetween the pixel electrode and the scan signal line, the peripheraledge portion of the pixel electrode can overlap with the data signalline and the scan signal line, so that higher aperture ratio of thepixel can be realized.

Photolithography is performed on the planarization film using themulti-tone mask, whereby a display device can be manufactured withoutincreasing the number of the photomasks. Thus, by reduction in thenumber of photomasks, a photolithography process can be simplified andincrease in manufacturing cost can be suppressed. Thus, the displaydevice with high quality such as high image quality or high apertureratio can be produced at low cost.

In the present invention, the display device includes a display element.As described in this embodiment, the liquid crystal element (liquidcrystal display element) is suitably used as the display element.Further, a light-emitting element (EL element), in which a layerincluding an organic substance, an inorganic substance, or a compoundthereof that perform light-emission referred to as electroluminescence(hereinafter, also referred to as “EL”) is interposed betweenelectrodes, may be used. Further, a display medium whose contrast ischanged by an electric effect, such as an electronic ink, can be used.Note that a display device using the EL element refers to an EL display,and a display device using a liquid crystal element refers to a liquidcrystal display, a transmissive liquid crystal display, asemi-transmissive liquid crystal display. A display device usingelectronic ink refers to an electronic paper.

In addition, the display device includes a panel in which a displayelement is sealed, and a module in which an IC and the like including acontroller are mounted on the panel. The present invention furtherrelates to one mode of an element substrate before the display elementis completed in a manufacturing process of the display device, and theelement substrate is provided with a means for supplying current to thedisplay element in each of a plurality of pixels. As for the elementsubstrate, specifically, only a pixel electrode layer of the displayelement is formed, or a conductive film to be a pixel electrode layerhas been deposited and the conductive film is not etched yet to form apixel electrode layer. Alternatively, any other mode may be applied tothe element substrate.

A display device in this specification means an image display device, adisplay device, or a light source (including a lighting device).Further, the display device includes any of the following modules in itscategory: a module including a connector such as an flexible printedcircuit (FPC), tape automated bonding (TAB) tape, or a tape carrierpackage (TCP); a module having TAB tape or a TCP which is provided witha printed wiring board at the end thereof, and a module having anintegrated circuit (IC) which is directly mounted on a display elementby a chip on glass (COG) method.

Embodiment 2

An example in which the shape of a thin film transistor is differentfrom that of Embodiment 1 will be described in this embodiment. Exceptthe shape, the thin film transistor can be formed in a similar manner toEmbodiment 1; thus, repetitive description of the same components orcomponents having similar functions as in Embodiment 1 and manufacturingsteps for forming those components will be omitted.

FIG. 11 illustrates a thin film transistor 400 of this embodiment, whichis an inversed staggered thin film transistor with a channel-etchedstructure.

In FIG. 11, over a substrate 401, a thin film transistor 400 is providedwhich includes a gate electrode 402, a gate insulating film 403, amicrocrystalline semiconductor film 404, a buffer layer 405, an impuritysemiconductor film 406 a and an impurity semiconductor film 406 b, towhich an impurity element imparting one conductivity type is added, asource or drain electrode 407 a and a source or drain electrode 407 b,and a passivation film 408 is provided so as to cover the thin filmtransistor 400.

In this embodiment, the microcrystalline semiconductor film 404 is usedinstead of the semiconductor film formed using amorphous silicon inEmbodiment 1. In addition, the buffer layer 405 is formed between themicrocrystalline semiconductor film 404, and the impurity semiconductorfilm 406 a and the impurity semiconductor film 406 b, to which animpurity element imparting one conductivity type is added.

The steps of forming and etching the microcrystalline semiconductor film404, the buffer layer 405, and the impurity semiconductor film 406 a andthe impurity semiconductor film 406 b, to which an impurity elementimparting one conductivity type is added, are performed in a similarmanner to those of forming and etching the semiconductor film 209, andthe impurity semiconductor film 210 a and the impurity semiconductorfilm 210 b, to which an impurity element imparting one conductivity typeis added, in Embodiment 1.

The buffer layer 405 is provided over the microcrystalline semiconductorfilm 404, whereby damage to the microcrystalline semiconductor film 404,which is caused in manufacturing process (reduction in film thicknessdue to radical by plasma or etchant in etching, oxidation, or the like),can be prevented. Therefore, reliability of the thin film transistor 400can be improved.

The microcrystalline semiconductor film 404 may be formed over thesurface of the gate insulating film 403 on which hydrogen plasmatreatment has been performed. By forming the microcrystallinesemiconductor film 404 over the gate insulating film 403 which has beenaffected by hydrogen plasma, crystal growth of microcrystals can bepromoted. In addition, lattice distortion at the interface between thegate insulating film 403 and the microcrystalline semiconductor film 404can be decreased, and interface characteristics of the gate insulatingfilm 403 and the microcrystalline semiconductor film 404 can beimproved. Therefore, the resulting microcrystalline semiconductor film404 can have high electric characteristics and high reliability.

The gate insulating film 403, the microcrystalline semiconductor film404, the buffer layer 405, and the impurity semiconductor film 406 a andthe impurity semiconductor film 406 b, to which an impurity elementimparting one conductivity type is added, may be formed in one reactionchamber, or different reaction chambers according to the kind of eachfilm.

Before a substrate is carried into a reaction chamber to perform filmformation, it is preferable to perform cleaning, flush (washing)treatment (hydrogen flush using hydrogen as a flush substance, silaneflush using silane as a flush substance, or the like), and coating bywhich the inner wall of each reaction chamber is coated with aprotective film (the coating is also referred to as pre-coatingtreatment). The pre-coating treatment is treatment in which plasmatreatment is performed by making a deposition gas flow in a reactionchamber to thinly coat the inside of the reaction chamber in advancewith a protective film which is to be formed. By the flush treatment andthe pre-coating treatment, a film to be formed can be prevented frombeing contaminated by an impurity such as oxygen, nitrogen, or fluorinein the reaction chamber.

Note that the gate insulating film 403, the microcrystallinesemiconductor film 404, the buffer layer 405, the impurity semiconductorfilm 406 a and the impurity semiconductor film 406 b, to which animpurity element imparting one conductivity type is added, may be formedsuccessively without being exposed to the atmosphere. By depositingsuccessively the gate insulating film 403, the microcrystallinesemiconductor film 404, the buffer layer 405, the impurity semiconductorfilm 406 a and the impurity semiconductor film 406 b, to which animpurity element imparting one conductivity type is added, without beingexposed to the atmosphere, each interface between the stacked layers canbe formed without being contaminated by atmospheric components orcontaminating impurities contained in the atmosphere. Thus, variationsin the characteristics of thin film transistors can be reduced.

As an example of a three-layer structure of the gate insulating film403, over the gate electrode 402, a silicon nitride film or a siliconnitride oxide film is formed as a first layer, a silicon oxynitride filmis formed as a second layer, and a silicon nitride film is formed as athird layer. The microcrystalline semiconductor film may be formed overthe silicon nitride film that is a top layer of the gate insulating film403. In this case, the silicon nitride film or the silicon nitride oxidefilm as the first layer is preferably thicker than 50 nm and has aneffect as a barrier which blocks impurities such as sodium, an effect ofpreventing a hillock of the gate electrode, an effect of preventingoxidation of the gate electrode, and the like. The silicon nitride filmas the third layer has an effect of improving adherence of themicrocrystalline semiconductor film and an effect of preventingoxidation in LP treatment in which the microcrystalline semiconductorfilm is irradiated with a laser beam.

When a nitride film such as a silicon nitride film which is very thin isformed over the surface of the gate insulating film 403 in this manner,adherence of the microcrystalline semiconductor film 404 can beimproved. The nitride film may be formed by a plasma CVD method, or bynitridation treatment that is treatment with plasma which is generatedby microwaves and has high density and low temperature. In addition, thesilicon nitride film or the silicon nitride oxide film may also beformed when a reaction chamber is subjected to silane flush treatment.

Further, the microcrystalline semiconductor film 404 has weak n-typeconductivity when an impurity element for controlling valence electronsis not added intentionally. The threshold value of the thin filmtransistor 400 can be controlled by adding an impurity element impartingp-type conductivity to the microcrystalline semiconductor film 404functioning as a channel formation region at the same time as or afterformation of the microcrystalline semiconductor film 404. A typicalexample of the impurity element imparting p-type conductivity is boron;and an impurity gas such as B₂H₆ or BF₃ may be added to silicon hydrideat 1 ppm to 1000 ppm, preferably, 1 ppm to 100 ppm. The concentration ofboron is preferably set at 1×10¹⁴ atoms/cm³ to 6×10¹⁶ atoms/cm³, forexample.

The microcrystalline semiconductor film 404 is a film which contains asemiconductor having an intermediate structure between amorphous andcrystalline structures (including a single crystal and a polycrystal).This semiconductor is a semiconductor which has a third state that isstable in terms of free energy, and is a crystalline semiconductor whichhas short-range order and lattice distortion, and column-like orneedle-like crystals with a grain size, seen from the film surface, of0.5 nm to 20 nm are grown in a normal direction with respect to thesurface of the substrate. In addition, a microcrystalline semiconductorand a non-single-crystal semiconductor are mixed. In microcrystallinesilicon which is a typical example of microcrystalline semiconductors,its Raman spectrum is shifted to a lower wavenumber side than 521 cm-1which represents single crystal silicon. That is, the peak of a Ramanspectrum of microcrystalline silicon exists between 521 cm-1 thatrepresents single crystal silicon and 480 cm-1 that represents amorphoussilicon. The semiconductor includes hydrogen or halogen of at least 1at. % in order to terminate a dangling bond. Moreover, a rare gaselement such as helium, argon, krypton, or neon may be included tofurther promote lattice distortion, so that stability is enhanced and afavorable microcrystalline semiconductor film can be obtained. Suchdescription about a microcrystalline semiconductor film is disclosed in,for example, U.S. Pat. No. 4,409,134.

The microcrystalline semiconductor film 404 can be formed by ahigh-frequency plasma CVD apparatus with a frequency of several tens toseveral hundreds of megahertz or a microwave plasma CVD apparatus with afrequency of 1 GHz or more. The microcrystalline semiconductor film 404can be typically formed by a dilution of a silicon gas (a siliconhydride gas or a silicon halide gas) such as SiH₄, Si₂H₆, SiH₂Cl₂,SiHCl₃, SiCl₄, or SiF₄ with hydrogen. With a dilution with one or pluralkinds of rare gas elements selected from helium, argon, krypton, andneon in addition to a silicon gas and hydrogen, the microcrystallinesemiconductor film can be formed. The flow rate of hydrogen to siliconhydride is set to be 5:1 to 200:1, preferably, 50:1 to 150:1, and morepreferably, 100:1.

Preferably, the microcrystalline semiconductor film 404 contains oxygenat a concentration of less than or equal to 5×10¹⁹ atoms/cm³, and morepreferably, less than or equal to 1×10¹⁹ atoms/cm³, and nitrogen andcarbon each at a concentration of less than or equal to 1×10¹⁸atoms/cm³. By decreases in concentrations of oxygen, nitrogen, andcarbon mixed in the microcrystalline semiconductor film, themicrocrystalline semiconductor film 404 can be prevented from having ann-type conductivity.

The microcrystalline semiconductor film 404 is formed with a thicknessof more than 0 nm and less than or equal to 50 nm, preferably more than0 nm and less than or equal to 20 nm.

The microcrystalline semiconductor film 404 functions as a channelformation region of the thin film transistor 400 to be formed later.When the microcrystalline semiconductor film 404 is formed to athickness within the above-described range, the thin film transistor 400to be formed later is a fully depleted type. Furthermore, because themicrocrystalline semiconductor film contains microcrystals, it has alower resistance than an amorphous semiconductor film. Therefore, thecurve representing current-voltage characteristics of a thin filmtransistor using the microcrystalline semiconductor film is steep in arising portion, and the thin film transistor has an excellent responseas a switching element and can operate at high speed. When themicrocrystalline semiconductor film 404 is used for the channelformation region of the thin film transistor 400, fluctuation in thethreshold voltage of the thin film transistor 400 can be suppressed.Therefore, a display device with less variation of electricalcharacteristics can be manufactured.

The microcrystalline semiconductor film has a higher mobility than anamorphous semiconductor film. Therefore, if the thin film transistor 400in which a channel formation region is formed using the microcrystallinesemiconductor film 404 is used as a switching element of a displayelement, the area of the channel formation region can be reduced; inother words, the area of the thin film transistor 400 can be reduced.Thus, the area of the thin film transistor 400 in each pixel is reduced,whereby the aperture ratio of the pixel can be increased. Accordingly, adevice with high resolution can be manufactured.

The microcrystalline semiconductor film has a needle-like crystal whichhas grown longitudinally from the lower side. The microcrystallinesemiconductor film has a mixed structure of amorphous and crystallinestructures, and it is likely that a crack is generated and a gap isformed between the crystalline region and the amorphous region due tolocal stress. A new radical may be interposed into this gap and causecrystal growth. Because the upper crystal face is larger, crystal islikely to grow upward into a needle shape. Even if the microcrystallinesemiconductor film grows longitudinally as described above, the growthrate is a tenth to a hundredth of the film formation rate of anamorphous semiconductor film.

The buffer layer 405 which is an amorphous semiconductor film can beformed by a plasma CVD method using a silicon gas (a silicon hydride gasor a silicon halide gas) such as SiH₄, Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, orSiF₄. Further, the buffer layer 405 which is an amorphous semiconductorfilm can be formed by diluting the silicon gas with one or plural kindsof rare gas elements selected from helium, argon, krypton, or neon. Thebuffer layer 405 which is an amorphous semiconductor film containinghydrogen can also be formed using hydrogen with a flow rate greater thanor equal to 1 time and less than or equal to 20 times, preferablygreater than or equal to 1 time and less than or equal to 10 times, andmore preferably greater than or equal to 1 time and less than or equalto 5 times as high as that of silicon hydride. Alternatively, the bufferlayer 405 which is an amorphous semiconductor film containing nitrogencan be formed using the silicon gas and nitrogen or ammonia. Further,the buffer layer 405 which is an amorphous semiconductor film includingfluorine, chlorine, bromine, or iodine can also be formed using theabove silicon gas, and a gas including fluorine, chlorine, bromine, oriodine (e.g., F₂, Cl₂, Br₂, I₂, HF, HCl, HBr, or HI).

Alternatively, the buffer layer 405 can be formed as an amorphoussemiconductor film by sputtering an amorphous semiconductor as a targetwith hydrogen or a rare gas. At this time, the buffer layer 405 which isan amorphous semiconductor film including nitrogen can be formed whenthe atmosphere includes ammonia, nitrogen, or N₂O. Alternatively, byinclusion of a gas including fluorine, chlorine, bromine, or iodine (F₂,Cl₂, Br₂, I₂, HF, HCl, HBr, HI, or the like) in an atmosphere, thebuffer layer 405 which is an amorphous semiconductor film containingfluorine, chlorine, bromine, or iodine can be formed.

Still alternatively, as the buffer layer 405, an amorphous semiconductorfilm is formed on a surface of the microcrystalline semiconductor filmby a plasma CVD method or a sputtering method, and then byhydrogenation, nitridation, or halogenation of the surface of theamorphous semiconductor film through processing of the surface of theamorphous semiconductor film with hydrogen plasma, nitrogen plasma,halogen plasma, or plasma of a rare gas (helium, argon, krypton, orneon).

The buffer layer 405 is preferably formed using an amorphoussemiconductor film. Therefore, when the buffer layer 405 is formed by amicrowave plasma CVD method or a high-frequency plasma method with afrequency of several tens to several hundreds of megahertz, formationconditions are preferably controlled so that an amorphous semiconductorfilm can be obtained.

Typically, the buffer layer 405 is preferably formed with a thickness ofgreater than or equal to 10 nm and less than or equal to 50 nm. Thetotal concentration of nitrogen, carbon, and oxygen contained in thebuffer layer is preferably set at 1×10²⁰ atoms/cm³ to 15×10²⁰ atoms/cm³.With this concentration, the buffer layer with a thickness of graterthan or equal to 10 nm and less than or equal to 50 nm can also functionas a high-resistance region.

Alternatively, the buffer layer 405 may be formed with a thickness ofgreater than or equal to 150 nm and less than or equal to 200 nm, andthe concentration of each of carbon, nitrogen, and oxygen contained inthe buffer layer 405 may be set at less than or equal to 3×10¹⁹atoms/cm³, preferably, less than or equal to 5×10¹⁸ atoms/cm³.

By forming an amorphous semiconductor film or an amorphous semiconductorfilm including hydrogen, nitrogen, or halogen over the surface of themicrocrystalline semiconductor film 404, as a buffer layer 405, thesurfaces of crystal grains included in the microcrystallinesemiconductor film 404 can be prevented from being naturally oxidized.That is, by formation of the buffer layer 405 over the surface of themicrocrystalline semiconductor film 404, the microcrystal grains can beprevented from being oxidized. Since the buffer layer 405 includeshydrogen and/or fluorine, oxygen can be prevented from entering themicrocrystalline semiconductor film 404.

The buffer layer 405 is formed using an amorphous semiconductor film oran amorphous semiconductor film containing hydrogen, nitrogen, orhalogen, so that the buffer layer 54 has higher resistance than themicrocrystalline semiconductor film 404 which functions as a channelformation region. Therefore, in the thin film transistor 400 to beformed later, the buffer layer formed between the source electrode andthe drain electrode and the microcrystalline semiconductor filmfunctions as a high-resistant region. Accordingly, the off current ofthe thin film transistor can be reduced. When the thin film transistoris used as a switching element of a display device, the contrast of thedisplay device can be improved.

The end portions of the microcrystalline semiconductor film 404, thebuffer layer 405, the impurity semiconductor film 406 a and the impuritysemiconductor film 406 b, to which an impurity element imparting oneconductivity type is added, are etched to have a tapered shape. Thus,the impurity semiconductor film 406 a and the impurity semiconductorfilm 406 b, to which an impurity element imparting one conductivity typeis added, and the microcrystalline semiconductor film 404 can beprevented from being directly in contact with each other. The taperangle of the end portions is 30° to 90°, preferably 45° to 80°.Accordingly, the distance between the impurity semiconductor film 406 aand the impurity semiconductor film 406 b, to which an impurity elementimparting one conductivity type is added, and the microcrystallinesemiconductor film 404 can be increased and leakage current can beprevented from being generated. In addition, disconnection of a wiringdue to a step shape can be prevented.

The buffer layer 405 is a continuous film in which a buffer layer belowthe impurity semiconductor film 406 a and the impurity semiconductorfilm 406 b, to which an impurity element imparting one conductivity typeis added, and a buffer layer over the channel formation region which isthe microcrystalline semiconductor film 404 are formed at the same timeusing the same material. The buffer layer over the microcrystallinesemiconductor film 404 blocks external air and an etching residue withhydrogen contained therein and protects the microcrystallinesemiconductor film 404.

The buffer layer 405 which does not include an impurity imparting oneconductivity type is provided, whereby the impurity imparting oneconductivity type, which is included in the impurity semiconductor film406 a and the impurity semiconductor film 406 b, to which an impurityelement imparting one conductivity type is added, and an impurityimparting one conductivity type, which is used for controlling thethreshold voltage of the microcrystalline semiconductor film 404, can beprevented from being mixed with each other. When impurities eachimparting one conductivity type are mixed with each other, arecombination center is generated, which leads to flow of leakagecurrent and loss of the effect of reducing off current.

By provision of the buffer layer 405 as described above, a thin filmtransistor with high withstand voltage, in which leakage current isreduced, can be manufactured. Accordingly, the thin film transistor hashigh reliability and can be suitably used for a liquid crystal displaydevice where a voltage of 15 V is applied.

By formation of a channel formation region with a microcrystallinesemiconductor film, a field-effect mobility of 1 cm²/V·sec to 20cm²/V·sec can be achieved. Accordingly, this thin film transistor can beused as a switching element of a pixel in a pixel portion and as anelement included in a scan line (gate line) side driver circuit.

According to this embodiment, a highly-reliable display device which hasa pixel with a high aperture ratio can be manufactured. Further, byreducing the number of light-exposure masks, a photolithography processis simplified, whereby a highly-reliable display device can bemanufactured at low cost with high productivity.

Embodiment 3

In this embodiment, an example of a manufacturing process of Embodiment2, in which a microcrystalline semiconductor film is irradiated withlaser light, will be described.

In the case where the microcrystalline semiconductor film is formed overthe gate insulating film by a plasma CVD method or the like, near theinterface between the gate insulating film and a semiconductor filmwhich contains crystals, a region which contains more amorphouscomponents than crystalline components (here such a region is referredto as an interface region) is formed in some cases. In addition, in thecase where an ultra-thin microcrystalline semiconductor film with athickness of about less than or equal to 10 nm is formed by a plasma CVDmethod or the like, although a semiconductor film which containsmicrocrystal grains can be formed, it is difficult to obtain asemiconductor film which contains microcrystal grains which has highquality uniformly throughout the film. In these cases, a laser processfor irradiation with laser light to be described below is effective.

First, a gate electrode is formed over a light-transmitting substrate,and a gate insulating film is formed to cover the gate electrode. Then,a microcrystalline silicon (SAS) film is formed as a microcrystallinesemiconductor film over the gate insulating film. The thickness of themicrocrystalline semiconductor film is greater than or equal to 1 nm andless than 15 nm, preferably greater than or equal to 2 nm and less thanor equal to 10 nm. In particular, the microcrystalline semiconductorfilm with a thickness of 5 nm (4 nm to 8 nm) has high absorptance withrespect to laser light and improves productivity.

Next, the microcrystalline silicon film is irradiated with laser lightfrom the surface side. The irradiation is performed with such energythat the laser light does not melt the microcrystalline silicon film.That is, this laser process (hereinafter, also referred to as “LP”) ofthis embodiment involves solid-phase crystal growth which is performedby radiation heating without the microcrystalline silicon film beingmelted. That is, the process utilizes a critical region where adeposited microcrystalline silicon film is not brought into a liquidphase, and in that sense, the process can also be referred to as“critical growth”.

The laser light can affect a region to the interface between themicrocrystalline silicon film and the gate insulating film. Accordingly,using the crystals on the surface side of the microcrystalline siliconfilm as nuclei, solid-phase crystal growth advances from the surfacetoward the interface with the gate insulating film, and roughly columnarcrystals grow. The solid-phase crystal growth by the LP process is notto increase the size of crystal grains but rather to improvecrystallinity in a film thickness direction.

In the LP process, for example, a microcrystalline silicon film over aglass substrate of 730 mm×920 mm can be processed by a single laserlight scan, by collecting laser light into a long rectangular shape(linear laser light). In such a case, an overlap rate of the linearlaser light is set to be from 0% to 90% (preferably from 0% to 67%).Accordingly, the length of processing time for each substrate can beshortened, and productivity can be increased. The shape of the laserlight is not limited to a linear shape, and similar processing can beconducted using planar laser light. Further, the LP can be applied tosubstrates with various sizes without limitation to the above size ofthe glass substrate.

The LP process has effects in improving crystallinity of an interfaceregion with the gate insulating film and improving electriccharacteristics of a thin film transistor having a bottom gate structurelike the thin film transistor of this embodiment.

Such critical growth also has a feature in that unevenness (a projectioncalled a ridge), which is observed on the surface of conventionallow-temperature polysilicon, is not formed and the smoothness of siliconsurface is maintained even after the LP process.

A crystalline silicon film that is obtained by the action of the laserlight directly on the microcrystalline silicon film as deposited in thisembodiment is distinctly different in growth mechanism and film qualityfrom a conventional microcrystalline silicon film as deposited and amicrocrystalline silicon film which is modified by conduction heating.In this specification, a crystalline semiconductor film obtained byperforming LP treatment on a microcrystalline semiconductor film afterthe formation is referred to as an LPSAS film.

After the microcrystalline semiconductor film such as an LPSAS film isformed, an amorphous silicon (a-Si:H) film is formed as a buffer layerby a plasma CVD method at temperatures of 300° C. to 400° C. Byformation of the amorphous silicon film, hydrogen is supplied to theLPSAS film, and the same effect as in the case of hydrogenation of theLPSAS film can be obtained. In other words, by formation of theamorphous silicon film over the LPSAS film, hydrogen is diffused intothe LPSAS film, so that a dangling bond can be terminated.

In the following process, a display device including a thin filmtransistor is manufactured in similar manner to that in Embodiment 1.

This embodiment can be combined with Embodiment 2 as appropriate.

Embodiment 4

Next, a structure of a display panel, which is one mode of a displaydevice in the present invention disclosed, will be described below. As adisplay device of this embodiment, an example of a liquid crystaldisplay panel, which is one mode of a liquid crystal display deviceincluding a liquid crystal display element, will be described.

FIG. 12A to 12C illustrate a mode of a display panel in which a signalline driver circuit 613, which is separately formed, is connected to apixel portion 612 formed over a substrate 611. In this embodiment, thepixel portion 612 and a scan line driver circuit 614 are each formedusing a thin film transistor in which an amorphous semiconductor film, amicrocrystalline semiconductor film or a polycrystalline semiconductorfilm is used. When the signal line driver circuit is formed using atransistor which has higher field-effect mobility compared to the thinfilm transistor using the microcrystalline semiconductor film, anoperation of the signal line driver circuit which demands higher drivingfrequency than that of the scan line driver circuit can be stabilized.Note that the signal line driver circuit 613 may be formed with the useof a transistor using a single crystal semiconductor, a thin filmtransistor using a polycrystalline semiconductor, or a transistor usingSOI. The pixel portion 612, the signal line driver circuit 613, and thescan line driver circuit 614 are each supplied with potential of a powersource, a variety of signals, and the like via an FPC 615.

Note that both the signal line driver circuit and the scan line drivercircuit may be formed over the same substrate as that of the pixelportion.

Also, when a driver circuit is separately formed, a substrate providedwith the driver circuit is not always required to be attached to asubstrate provided with the pixel portion, and may be attached to, forexample, the FPC. FIG. 12B illustrates a mode of a display panel, inwhich only a signal line driver circuit 623 is separately formed andconnected to a pixel portion 622 and a scan line driver circuit 624formed over a substrate 621. In this embodiment, the pixel portion 622and the scan line driver circuit 624 are each formed with the use of athin film transistor using an amorphous semiconductor film, amicrocrystalline semiconductor film, or a polycrystalline semiconductorfilm. The signal line driver circuit 623 is connected to the pixelportion 622 via an FPC 625. The pixel portion 622, the signal linedriver circuit 623, and the scan line driver circuit 624 are eachsupplied with potential of a power source, a variety of signals, and thelike via the FPC 625.

Alternatively, only part of a signal line driver circuit or part of ascan line driver circuit may be formed over the same substrate as thatof a pixel portion by using a thin film transistor using an amorphoussemiconductor film, a microcrystalline semiconductor film, or apolycrystalline semiconductor film, and the other part of the drivercircuit may be separately formed and electrically connected to the pixelportion. FIG. 12C illustrates a mode of a display panel in which ananalog switch 633 a included in a signal line driver circuit is formedover a substrate 631, over which a pixel portion 632 and a scan linedriver circuit 634 are formed, and a shift register 633 b included inthe signal line driver circuit is formed separately over a differentsubstrate and then attached to the substrate 631. In this embodiment,the pixel portion 632 and the scan line driver circuit 634 are eachformed with the use of a thin film transistor using an amorphoussemiconductor film, a microcrystalline semiconductor film, or apolycrystalline semiconductor film. The shift register 633 b included inthe signal line driver circuit is connected to the pixel portion 632 viaan FPC 635. The pixel portion 632, the signal line driver circuit, andthe scan line driver circuit 634 are each supplied with a potential of apower source, a variety of signals, and the like via the FPC 635.

As illustrated in FIGS. 12A to 12C, in the display device of thisembodiment, all or part of the driver circuit can be formed over thesame substrate as that of a pixel portion with the use of the thin filmtransistor in which an amorphous semiconductor film, a microcrystallinesemiconductor film or a polycrystalline semiconductor film is used.

Note that there is no particular limitation on a connection method ofthe substrate formed separately, and a known COG method, a wire bondingmethod, a TAB method, or the like can be used. Further, a connectionposition is not limited to the position illustrated in FIGS. 12A to 12C,as long as electrical connection is possible. Alternatively, acontroller, a CPU, a memory, and/or the like may be formed separatelyand connected.

Note that the signal line driver circuit used in the present inventionis not limited to a mode including only a shift register and an analogswitch. In addition to the shift register and the analog switch, anothercircuit such as a buffer, a level shifter, or a source follower may beincluded. Moreover, the shift register and the analog switch are notnecessarily provided. For example, a different circuit such as a decodercircuit by which a signal line can be selected may be used instead ofthe shift register, or a latch or the like may be used instead of theanalog switch.

Next, an external view and a cross section of a display panel, which isone mode of the display device of the invention to be disclosed, will bedescribed with reference to FIGS. 13A and 13B. FIG. 13A is a top planview of a panel. In the panel, a thin film transistor 710 and a liquidcrystal element 713, which are formed over a first substrate 701, aresealed between the first substrate 701 and a second substrate 706 by asealant 705. FIG. 13B corresponds to a cross sectional view taken alonga line M-N in FIG. 13A.

The sealant 705 is provided to surround the pixel portion 702 and thescan line driver circuit 704, which are provided over the firstsubstrate 701. The second substrate 706 is provided over the pixelportion 702 and the scan line driver circuit 704. Accordingly, the pixelportion 702 and the scan line driver circuit 704 are sealed togetherwith liquid crystal 708 by the first substrate 701, the sealant 705, andthe second substrate 706. A signal line driver circuit 703, which isformed over a substrate prepared separately using a polycrystallinesemiconductor film, is mounted at a region different from the regionsurrounded by the sealant 705 over the first substrate 701. In thisembodiment, an example of attaching the signal line driver circuitincluding a thin film transistor formed using a polycrystallinesemiconductor film to the first substrate 701 will be described.Alternatively, a signal line driver circuit including a thin filmtransistor, which is formed using a single crystal semiconductor, may beattached to the first substrate 701. In FIGS. 13A and 13B, a thin filmtransistor 709, which is formed using a polycrystalline semiconductorfilm and included in the signal line driver circuit 703 will beillustrated as an example.

Further, the pixel portion 702 and the scan line driver circuit 704,which are formed over the first substrate 701, each include a pluralityof thin film transistors. The thin film transistor 710 included in thepixel portion 702 is illustrated in FIG. 13B. The thin film transistor710 corresponds to the thin film transistor described in Embodiment 1,which can be formed through the same manufacturing process described inEmbodiment 1.

The liquid crystal element 713 and the thin film transistor 710 areelectrically connected to each other by a light-transmitting conductivelayer 730 functioning as a pixel electrode layer. A counter electrode731 of the liquid crystal element 713 is formed on the second substrate706. A part in which the light-transmitting conductive layer 730, thecounter electrode 731, and the liquid crystal 708 are overlappedcorresponds to the liquid crystal element 713.

Note that as the first substrate 701 and the second substrate 706,glass, ceramics, or plastics can be used. As for plastic, an FRP(fiberglass-reinforced plastics) plate, a PVF (polyvinyl fluoride) film,a polyester film, or an acrylic resin film can be used. In the case of atransmissive liquid crystal display device, the first and secondsubstrates needs to have a light-transmitting property. However, in thecase of a semi-transmitting liquid crystal display device, a reflectivematerial may be used for a part which corresponds to a reflectiveregion.

A spherical spacer 735 is provided to control a distance (a cell gap)between the light-transmitting conductive layer 730 and the counterelectrode 731. Note that a spacer which is obtained by selective etchingof an insulating film may also be used.

A variety of signals and a potential, which are supplied to the signalline driver circuit 703 separately formed, the scan line driver circuit704, and the pixel portion 702, are supplied from an FPC 718 via wirings714 and 715.

In this embodiment, a connection terminal 716 is formed using the sameconductive film as that of the light-transmitting conductive layer 730included in the liquid crystal element 713.

The connection terminal 716 is electrically connected to a terminal ofan FPC 718 via an anisotropic conductive film 719.

Note that, although not illustrated, the liquid crystal display devicedescribed in this embodiment includes an alignment film on the secondsubstrate 706 side, and includes polarizing plates on the firstsubstrate 701 side and the second substrate 706 side. Further, a colorfilter or a blocking film may be included.

Note that FIGS. 13A and 13B illustrate an example in which the signalline driver circuit 703 is formed separately and mounted on the firstsubstrate 701; however, this embodiment is not limited to thisstructure. The scan line driver circuit may be separately formed andmounted on the substrate, or only part of the signal line driver circuitor part of the scan line driver circuit may be separately formed andmounted on the substrate.

This embodiment can be implemented as appropriate in combination withany of the structures described in the other embodiments.

According to this embodiment, a highly-reliable display panel having apixel with a high aperture ratio can be manufactured. Further, aphotolithography process is simplified by reducing the number oflight-exposure masks, whereby a reliable display panel can bemanufactured at low cost with high productivity.

Embodiment 5

A display device obtained by the present invention can be used for adisplay module. That is, the present invention can be implemented in alltypes of electronic devices in which the display module is incorporatedinto a display portion.

As those kinds of electronic devices, cameras such as video cameras anddigital cameras; head-mounted displays (goggle type displays); carnavigation systems; projectors; car stereos; personal computers;portable information terminals (such as mobile computers, mobile phones,and electronic book readers); and the like can be given. FIGS. 14A to14D illustrate examples of such electronic devices.

FIG. 14A illustrates a television device. The television device can becompleted by incorporating a display module into a housing asillustrated in FIG. 14A. A display panel at the stage after an FPC isattached is also referred to as a display module. A main screen 803 isformed using the display module, and a speaker portion 809, operationswitches, and the like are provided as its accessory equipment. In sucha manner, the television device can be completed.

As illustrated in FIG. 14A, a display panel 802 using a display elementis incorporated into a housing 801. The television device can receivegeneral TV broadcast by a receiver 805, and can be connected to a wiredor wireless communication network via a modem 804, so that one-way (froma sender to a receiver) or two-way (between a sender and a receiver orbetween receivers) information communication can be performed.Operations of the television device can be performed using switches thatare incorporated into the housing or by a remote control device 806provided separately, and a display portion 807 that displays informationoutput to this remote control device may be provided for the remotecontrol device 806. By application of the display device described inthe above embodiment to the display panel 802, effects such asimprovement in reliability due to reduction in wiring delay, improvementin an aperture ratio due to reduction in thickness of the auxiliarycapacitor portion, improvement in image quality due to planarization ofthe pixel electrode, simplification of a photolithography process andreduction in manufacturing cost due to reduction in the number ofphotomasks, and the like can be obtained. Owing to the above effects,the display device described in the above embodiment is suitable for alarge panel used for a liquid crystal television or the like amongdisplay panels. When high definition is especially needed, an apertureratio can be improved by the method described in the above embodiment.

Further, the television device may include a sub-screen 808 formed usinga second display panel to display channels, volume, or the like, inaddition to the main screen 803.

FIG. 15 is a block diagram illustrating a main structure of a televisiondevice. A pixel portion 901 is formed in a display panel. A signal linedriver circuit 902 and a scan line driver circuit 903 may be mounted onthe display panel by a COG method.

As for other external circuits, the television device includes a videosignal amplifier circuit 905 which amplifies a video signal amongsignals received by a tuner 904; a video signal processing circuit 906which converts a signal output from the video signal amplifier circuit905 into a color signal corresponding to each color of red, green, andblue; a control circuit 907 which converts the video signal into aninput specification of a driver IC; and the like. The control circuit907 outputs a signal to each of the scan line side and the signal lineside. In the case of digital drive, a signal dividing circuit 908 may beprovided on the signal line side and an input digital signal may bedivided into m pieces and supplied.

Audio signals among the signals received at the tuner 904 aretransmitted to an audio signal amplifier circuit 909, and an outputthereof is supplied to a speaker 913 through an audio signal processingcircuit 910. A control circuit 911 receives control information of areceiving station (reception frequency) or sound volume from an inputportion 912 and transmits signals to the tuner 904 or the audio signalprocessing circuit 910.

Needless to say, the present invention is not limited to a televisiondevice and can be applied to a variety of uses, such as a monitor of apersonal computer, a large display medium such as an information displayboard at the train station, the airport, or the like, or anadvertisement display board on the street.

FIG. 14B illustrates an example of a mobile phone 811. The mobile phone811 includes a display portion 812, an operation portion 813, and thelike. The display device described in the above-described embodiment isapplied to the display portion 812, whereby improvement in an apertureratio and reliability of the display device, reduction in cost, andenhancement of mass productivity can be realized.

A portable computer illustrated in FIG. 14C includes a main body 821, adisplay portion 822, and the like. The display device described in theabove-described embodiment is applied to the display portion 822,whereby improvement in an aperture ratio and reliability of the displaydevice, reduction in cost and enhancement of mass productivity can berealized.

A slot machine illustrated in FIG. 14D, which is an example of a gamemachine, includes a main body 831, a display portion 832, and the like.The display device described in the above-described embodiment isapplied to the display portion 832, whereby improvement in an apertureratio and reliability of the display device, reduction in cost andenhancement of mass productivity can be realized.

This application is based on Japanese Patent Application serial no.2008-089241 filed with Japan Patent Office on Mar. 31, 2008, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A display device comprising: a gate electrodeover a light-transmitting substrate, wherein the gate electrodecomprises a first conductive material; a data signal line over thelight-transmitting substrate, wherein the data signal line comprises thefirst conductive material and extends in one direction; a firstinsulating film over the gate electrode and the data signal line; asemiconductor film over the first insulating film; a source electrodeover the first insulating film and the semiconductor film, wherein thesource electrode comprises a second conductive material; a drainelectrode over the first insulating film and the semiconductor film,wherein the drain electrode comprises the second conductive material; ascan signal line over the first insulating film, wherein the scan signalline comprises the second conductive material and extends in a directionintersecting with the one direction; an auxiliary capacitor line overthe first insulating film, wherein the auxiliary capacitor linecomprises the second conductive material and extends in the directionintersecting with the one direction; a second insulating film over thefirst insulating film, the source electrode and the drain electrode, thescan signal line and the auxiliary capacitor line; a third insulatingfilm having an opening over the second insulating film; and a pixelelectrode over the third insulating film , the pixel electrode being incontact with a portion of the second insulating film in the opening,wherein one of the source electrode and the drain electrode iselectrically connected to the semiconductor film and the data signalline, wherein the other of the source electrode and the drain electrodeis electrically connected to the semiconductor film and the pixelelectrode, wherein the gate electrode is electrically connected to thescan signal line; and wherein the auxiliary capacitor line and the pixelelectrode are included in an auxiliary capacitor portion where theportion of the second insulating film is used as a dielectric film. 2.The display device according to claim 1, wherein a peripheral edgeportion of the pixel electrode overlaps with the data signal line andthe auxiliary capacitor line.
 3. The display device according to claim1, wherein the semiconductor film has a portion that is recessed whenseen in cross section.
 4. The display device according to claim 3,further comprising: a first impurity semiconductor film and a secondimpurity semiconductor film, to which an impurity element imparting oneconductivity type is added, over the semiconductor film, wherein one ofthe source electrode and the drain electrode is in contact with thefirst impurity semiconductor film and the data signal line; and whereinthe other of the source electrode and the drain electrode is in contactwith the second impurity semiconductor film and the pixel electrode. 5.The display device according to claim 1, wherein the third insulatingfilm comprises a photosensitive organic resin material.
 6. The displaydevice according to claim 1, wherein the data signal line and theauxiliary capacitor line intersect with each other with the firstinsulating film interposed therebetween.
 7. An electronic devicecomprising the display device according to claim 1 in a display portion.8. A display device comprising: a gate electrode over alight-transmitting substrate, wherein the gate electrode comprises afirst conductive material; a data signal line over thelight-transmitting substrate, wherein the data signal line comprises thefirst conductive material and extends in one direction; a firstinsulating film over the gate electrode and the data signal line; amicrocrystalline semiconductor film over the first insulating film; abuffer layer over the microcrystalline semiconductor film and has aportion that is recessed when seen in cross section; a first impuritysemiconductor film and a second impurity semiconductor film, to which animpurity element imparting one conductivity type is added, and which areprovided over the buffer layer; a source electrode over the firstinsulating film, the first impurity semiconductor film and the secondimpurity semiconductor film, wherein the source electrode comprises asecond conductive material; a drain electrode over the first insulatingfilm, the first impurity semiconductor film and the second impuritysemiconductor film, wherein the drain electrode comprises a secondconductive material; a scan signal line over the first insulating film,wherein the scan signal line comprises the second conductive materialand extends in a direction intersecting with the one direction; anauxiliary capacitor line over the first insulating film, wherein theauxiliary capacitor line comprises the second conductive material andextends in the direction intersecting with the one direction; a secondinsulating film over the first insulating film, the source electrode andthe drain electrode, the scan signal line and the auxiliary capacitorline; a third insulating film having an opening over the secondinsulating film; and a pixel electrode over the third insulating film,the pixel electrode being in contact with a portion of the secondinsulating film in the opening, wherein one of the source electrode andthe drain electrode is electrically connected to the first impuritysemiconductor film and the data signal line, wherein the other of thesource electrode and the drain electrode is electrically connected tothe second impurity semiconductor film and the pixel electrode, andwherein the gate electrode is electrically connected to the scan signalline; and wherein the auxiliary capacitor line and the pixel electrodeare included in an auxiliary capacitor portion where the portion of thesecond insulating film is used as a dielectric film.
 9. The displaydevice according to claim 8, wherein a peripheral edge portion of thepixel electrode overlaps with the data signal line and the auxiliarycapacitor line.
 10. The display device according to claim 8, wherein thethird insulating film comprises a photosensitive organic resin material.11. The display device according to claim 8, wherein the data signalline and the auxiliary capacitor line intersect with each other with thefirst insulating film interposed therebetween.
 12. An electronic devicecomprising the display device according to claim 8 in a display portion.